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A Method to elaborate monocristalline Geranium on silicon oxide
The technology developed and proposed is an alternative solution that enables lateral epitaxial growth of monocristalline and free of defects germanium on silicon oxide.

Technical Description :
Germanium is considered as a future material for future generation of transistors like MOSFET. It has the best hole mobility among all semiconductors IV-IV and III-V and represents a very good alternative for p-MOSFET. The technology developed and proposed is an alternative solution that enables lateral epitaxial growth of monocristalline and free of defects germanium on silicon oxide. Interface between germanium and oxide is free of dislocations.

Potential applications :
• Fully depleted MOSFET • Photonics components • Photovoltaic

Benefits :
Technology enables: • obtention of Ge/SiO2 free of defects and well adapted to FD MOSFET, fully depleted MOSFET architecture • reduction of short canal effects • Enhancement of carriers mobility • Reduction of production costs by starting from a silicium substrate instead of a SOI

Intellectual property :
French and international patent application Université Paris Sud and CNRS Co-ownership

Partnership type :
License et collaboration de recherche